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tec magna magnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 10/94 BUZ905 buz906 v dsx drain C source voltage v gss gate C source voltage i d continuous drain current i d(pk) body drain diode p d total power dissipation @ t case = 25c t stg storage temperature range t j maximum operating junction temperature r q jc thermal resistance junction C case 14v -8a -8a 125w C55 to 150c 150c 1.0c/w mechanical data dimensions in mm 39.0 1.1 30.2 0.15 16.9 0.15 r 4.0 0.1 r 4.4 0.2 ? 1.0 ? 20 max. 1.50 typ. 11.60 0.3 8.7 max. 10.90 0.1 +0.1 -0.15 25.0 12 pCchannel power mosfet features ? high speed switching ? pCchannel power mosfet ? semefab designed and diffused ? high voltage (160v & 200v) ? high energy rating ? enhancement mode ? integral protection diode ? nCchannel also available as buz900 & buz901 pin 1 C gate toC3 pin 2 C drain case C source absolute maximum ratings (t case = 25c unless otherwise stated) power mosfets for audio applications BUZ905 -160v buz906 -200v
tec ma gna ma gnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 10/94 b uz905 b uz906 characteristic t est conditions min. t yp. max. unit bv dsx drain C source breakdown voltage bv gss gate C source breakdown voltage v gs(off) gate C source cutCoff voltage v ds(sat) * drain C source saturation voltage i dsx drain C source cutCoff current yfs* forward transfer admittance -160 -200 14 -0.15 -1.5 -12 -10 -10 0.7 2 * pulse test: pulse width = 300 m s , duty cycle 2%. v gs = 10v BUZ905 i d = -10ma buz906 v ds = 0 i g = 100 m a v ds = -10v i d = -100ma v gd = 0 i d = -8a v ds = -160v BUZ905 v gs = -10v v ds = -200v buz906 v ds = -10v i d = -3a v v v v ma s characteristic t est conditions min. t yp. max. unit c iss input capacitance c oss output capacitance c rss reverse transfer capacitance t on turnCon time t off turn-off time 734 300 26 120 60 v ds = -10v f = 1mhz v ds = -20v i d = -5a pf ns st a tic chara cteristics (t case = 25c unless otherwise stated) d ynamic chara cteristics (t case = 25c unless otherwise stated) 0 25 50 75 100 125 150 0 25 50 75 100 125 150 t case temperature (?c) c c h a n n e l d i s s i p a t i o n ( w ) derating chart
tec ma gna ma gnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 10/94 b uz905 b uz906 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 p = 1 2 5 w c h i d r a i n c u r r e n t ( a ) d v drain C source voltage (v) ds t = 25?c c -7v -6v -5v -4v -3v -2v 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 p = 1 2 5 w c h i d r a i n c u r r e n t ( a ) d v drain C source voltage (v) ds -7v -6v -5v -4v -3v -2v t = 75?c c i d r a i n c u r r e n t ( a ) d v drain C source voltage (v) ds t = 25?c c -0.01 -0.1 -1 -10 -1 -10 -100 -1000 buz906 1 6 0 v 2 0 0 v d c o p e r a t i o n BUZ905 0.1 1 10 100 0 -1 -2 -3 -4 -5 -6 -7 -8 g t r a n s c o n d u c t a n c e ( s ) f s i drain current (a) d t = 75?c c t = 25?c c v = -20v ds typical output characteristics typical output characteristics forward bias safe operating area transconductance 0 -2 -4 -6 -8 -10 -12 -14 0 -2 -4 -6 -8 -10 v gate C source voltage (v) gs v d r a i n C s o u r c e v o l t a g e ( v ) d s t = 25?c c i = -6a d i = -3a d i = -1a d t = 25?c c i d r a i n c u r r e n t ( a ) d v gate C source voltage (v) gs 0 -1 -2 -3 -4 -5 -6 -7 -8 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 t = 75?c c t = 100?c c v = -10v ds drain C source voltage vs gate C source voltage typical transfer characteristics
tec ma gna ma gnatec. telephone (01455) 554711. telex: 341927. fax (01455) 552612. prelim. 10/94 b uz905 b uz906

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